Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2037 GANFET N-CH 100V 1.7A DIE EPC	28,654 In Stock	1 : ¥11.25000 Cut Tape (CT) 2,500 : ¥4.57657 Tape & Reel (TR)	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	1.7A (Ta)	5V	550mOhm @ 100mA, 5V	2.5V @ 80µA	0.12 nC @ 5 V	+6V, -4V	14 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
BSC160N10NS3GATMA1 MOSFET N-CH 100V 8.8A/42A TDSON Infineon Technologies	22,437 In Stock	1 : ¥12.89000 Cut Tape (CT) 5,000 : ¥5.07391 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	8.8A (Ta), 42A (Tc)	6V, 10V	16mOhm @ 33A, 10V	3.5V @ 33µA	25 nC @ 10 V	±20V	1700 pF @ 50 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.