Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSIII
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V4.5V, 10V
Rds On (Max) @ Id, Vgs
80mOhm @ 4.2A, 10V3.2Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.5V @ 100µA3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
15.1 pF @ 3 V587 pF @ 20 V
Power Dissipation (Max)
150mW (Ta)720mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
SOT-23-3USM
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP4065S-7
MOSFET P-CH 40V 2.4A SOT23
Diodes Incorporated
27,301
In Stock
162,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.77194
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
80mOhm @ 4.2A, 10V
3V @ 250µA
12.2 nC @ 10 V
±20V
587 pF @ 20 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
21,900
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.33715
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
3.2Ohm @ 10mA, 4V
1.5V @ 100µA
-
±20V
15.1 pF @ 3 V
-
150mW (Ta)
150°C
Surface Mount
USM
SC-70, SOT-323
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.