Single FETs, MOSFETs

Results: 8
Series
HiPerFET™, Polar3™HiPerFET™, Ultra X3
Drain to Source Voltage (Vdss)
200 V250 V300 V500 V
Current - Continuous Drain (Id) @ 25°C
132A (Tc)210A (Tc)220A (Tc)240A (Tc)300A (Tc)
Rds On (Max) @ Id, Vgs
4mOhm @ 150A, 10V4.6mOhm @ 105A, 10V5mOhm @ 120A, 10V5.5mOhm @ 105A, 10V6.2mOhm @ 110A, 10V14.5mOhm @ 105A, 10V39mOhm @ 66A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA4.5V @ 8mA5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
204 nC @ 10 V250 nC @ 10 V268 nC @ 10 V345 nC @ 10 V375 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
13600 pF @ 25 V16200 pF @ 25 V18600 pF @ 25 V23800 pF @ 25 V24200 pF @ 25 V
Power Dissipation (Max)
695W (Tc)960W (Tc)1250W (Tc)1890W (Tc)
Mounting Type
Chassis MountThrough Hole
Supplier Device Package
PLUS247™-3PLUS264™SOT-227BTO-264
Package / Case
SOT-227-4, miniBLOCTO-247-3 VariantTO-264-3, TO-264AA
Stocking Options
Environmental Options
Media
Marketplace Product
8Results

Showing
of 8
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247 Plus X
IXFX300N20X3
MOSFET N-CH 200V 300A PLUS247-3
Littelfuse Inc.
527
In Stock
690
Factory
1 : ¥271.17000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
300A (Tc)
10V
4mOhm @ 150A, 10V
4.5V @ 8mA
375 nC @ 10 V
±20V
23800 pF @ 25 V
-
1250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-247 Plus X
IXFX240N25X3
MOSFET N-CH 250V 240A PLUS247-3
Littelfuse Inc.
267
In Stock
720
Factory
1 : ¥271.17000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
240A (Tc)
10V
5mOhm @ 120A, 10V
4.5V @ 8mA
345 nC @ 10 V
±20V
23800 pF @ 25 V
-
1250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS247™-3
TO-247-3 Variant
ISOPLUS247
IXFX210N30X3
MOSFET N-CH 300V 210A PLUS247-3
Littelfuse Inc.
261
In Stock
1 : ¥190.63000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
210A (Tc)
10V
5.5mOhm @ 105A, 10V
4.5V @ 8mA
375 nC @ 10 V
±20V
24200 pF @ 25 V
-
1250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS247™-3
TO-247-3 Variant
TO-264
IXFK220N20X3
MOSFET N-CH 200V 220A TO264
Littelfuse Inc.
310
In Stock
400
Factory
1 : ¥113.87000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
220A (Tc)
10V
6.2mOhm @ 110A, 10V
4.5V @ 4mA
204 nC @ 10 V
±20V
13600 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA
TO-264
IXFB132N50P3
MOSFET N-CH 500V 132A PLUS264
Littelfuse Inc.
287
In Stock
1 : ¥216.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
132A (Tc)
10V
39mOhm @ 66A, 10V
5V @ 8mA
250 nC @ 10 V
±30V
18600 pF @ 25 V
-
1890W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS264™
TO-264-3, TO-264AA
TO-264
IXFB210N30P3
MOSFET N-CH 300V 210A PLUS264
Littelfuse Inc.
191
In Stock
1 : ¥250.89000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
210A (Tc)
10V
14.5mOhm @ 105A, 10V
5V @ 8mA
268 nC @ 10 V
±20V
16200 pF @ 25 V
-
1890W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PLUS264™
TO-264-3, TO-264AA
IXYK1x0xNxxxx
IXFN210N30X3
MOSFET N-CH 300V 210A SOT227B
Littelfuse Inc.
17
In Stock
1 : ¥380.77000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
210A (Tc)
10V
4.6mOhm @ 105A, 10V
4.5V @ 8mA
375 nC @ 10 V
±20V
24200 pF @ 25 V
-
695W (Tc)
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
IXFK240N25X3
IXFK240N25X3
MOSFET N-CH 250V 240A TO264
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥271.66000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
240A (Tc)
10V
5mOhm @ 120A, 10V
4.5V @ 8mA
345 nC @ 10 V
±20V
23800 pF @ 25 V
-
1250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-264
TO-264-3, TO-264AA
Showing
of 8

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.