Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DMG2301L-7 MOSFET P-CH 20V 3A SOT23 Diodes Incorporated	107,522 In Stock	1 : ¥2.63000 Cut Tape (CT) 3,000 : ¥0.43742 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	3A (Ta)	2.5V, 4.5V	120mOhm @ 2.8A, 4.5V	1.2V @ 250µA	5.5 nC @ 4.5 V	±8V	476 pF @ 10 V	-	1.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SI2310B-TP MOSFET N-CH 60V 3A SOT23 Micro Commercial Co	102,920 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.53750 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	3A (Tj)	4.5V, 10V	105mOhm @ 3A, 10V	1.3V @ 250µA	6 nC @ 4.5 V	±16V	247 pF @ 30 V	-	1.2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RRS090P03HZGTB AUTOMOTIVE PCH -30V -9A POWER MO Rohm Semiconductor	2,041 In Stock	1 : ¥13.05000 Cut Tape (CT) 2,500 : ¥5.48004 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	30 V	9A (Ta)	4V, 10V	15.4mOhm @ 9A, 10V	2.5V @ 1mA	30 nC @ 5 V	±20V	3000 pF @ 10 V	-	2W (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.