Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedNexperia USA Inc.onsemiTexas InstrumentsVishay Siliconix
Series
-NexFET™TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)660mA (Ta)3.8A (Ta)10A (Tc)76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
8.9mOhm @ 10A, 4.5V20mOhm @ 5A, 10V65mOhm @ 3.8A, 10V480mOhm @ 780mA, 4.5V1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1.15V @ 250µA1.2V @ 250µA1.5V @ 250µA2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V5.2 nC @ 4.5 V9.7 nC @ 4.5 V33 nC @ 10 V
Vgs (Max)
±6V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V170 pF @ 16 V563 pF @ 25 V1790 pF @ 10 V1880 pF @ 10 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)310mW (Ta)1.08W (Ta)2.8W (Ta), 69W (Tc)13.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-VSONP (3x3.3)PowerPAK® SC-70-6SOT-23-3SOT-323SOT-723
Package / Case
8-PowerVDFNPowerPAK® SC-70-6SC-70, SOT-323SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138PW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
913,706
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
SOT-23-3
DMP3099L-7
MOSFET P-CH 30V 3.8A SOT23
Diodes Incorporated
290,128
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.49040
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3.8A (Ta)
4.5V, 10V
65mOhm @ 3.8A, 10V
2.1V @ 250µA
5.2 nC @ 4.5 V
±20V
563 pF @ 25 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
CSD25402Q3A
MOSFET P-CH 20V 76A 8VSON
Texas Instruments
50,698
In Stock
1 : ¥7.22000
Cut Tape (CT)
2,500 : ¥2.98840
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
76A (Tc)
1.8V, 4.5V
8.9mOhm @ 10A, 4.5V
1.15V @ 250µA
9.7 nC @ 4.5 V
±12V
1790 pF @ 10 V
-
2.8W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
PowerPak SC-70-6 Single
SQA403EJ-T1_GE3
MOSFET P-CH 30V 10A PPAK SC70-6
Vishay Siliconix
15,090
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.68659
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10A (Tc)
4.5V, 10V
20mOhm @ 5A, 10V
2.5V @ 250µA
33 nC @ 10 V
±20V
1880 pF @ 10 V
-
13.6W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SC-70-6
PowerPAK® SC-70-6
SOT-723_631AA
NTK3139PT1G
MOSFET P-CH 20V 660MA SOT723
onsemi
37
In Stock
1 : ¥3.78000
Cut Tape (CT)
4,000 : ¥0.83711
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
660mA (Ta)
1.5V, 4.5V
480mOhm @ 780mA, 4.5V
1.2V @ 250µA
-
±6V
170 pF @ 16 V
-
310mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-723
SOT-723
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.