Single FETs, MOSFETs

Results: 4
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveLast Time BuyNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V40 V100 V
Current - Continuous Drain (Id) @ 25°C
780mA (Ta)6.2A (Ta)8.5A (Ta)14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
22mOhm @ 4A, 10V41mOhm @ 6.2A, 10V200mOhm @ 8.4A, 10V600mOhm @ 610mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.6 nC @ 4.45 V57 nC @ 10 V58 nC @ 10 V80 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
97 pF @ 15 V760 pF @ 25 V1200 pF @ 25 V3220 pF @ 25 V
Power Dissipation (Max)
540mW (Ta)2.5W (Ta)79W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SOMicro3™/SOT-23TO-220AB
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-220-3TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
Infineon Technologies
194,995
In Stock
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.94213
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
P-Channel
MOSFET (Metal Oxide)
20 V
780mA (Ta)
2.7V, 4.5V
600mOhm @ 610mA, 4.5V
1.5V @ 250µA
3.6 nC @ 4.45 V
±12V
97 pF @ 15 V
-
540mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
TO-220AB PKG
IRF9530NPBF
MOSFET P-CH 100V 14A TO220AB
Infineon Technologies
31,523
In Stock
1 : ¥7.64000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
14A (Tc)
10V
200mOhm @ 8.4A, 10V
4V @ 250µA
58 nC @ 10 V
±20V
760 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRF7241TRPBF
MOSFET P-CH 40V 6.2A 8SO
Infineon Technologies
14,144
In Stock
1 : ¥7.55000
Cut Tape (CT)
4,000 : ¥2.86420
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
6.2A (Ta)
4.5V, 10V
41mOhm @ 6.2A, 10V
3V @ 250µA
80 nC @ 10 V
±20V
3220 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF7403TRPBF
MOSFET N-CH 30V 8.5A 8SO
Infineon Technologies
12,014
In Stock
1 : ¥8.78000
Cut Tape (CT)
4,000 : ¥3.64907
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
30 V
8.5A (Ta)
4.5V, 10V
22mOhm @ 4A, 10V
1V @ 250µA
57 nC @ 10 V
±20V
1200 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.