Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesTexas InstrumentsVishay Siliconix
Series
-NexFET™OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)1.4A (Ta)4.5A (Ta), 5.9A (Tc)29A (Tc)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 10V4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
4.9mOhm @ 17A, 10V5mOhm @ 15A, 10V30mOhm @ 4A, 4.5V160mOhm @ 1.4A, 10V2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA2V @ 3.7µA2.5V @ 250µA3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6 nC @ 5 V0.9 nC @ 10 V20 nC @ 10 V62 nC @ 10 V195 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
23.2 pF @ 25 V94 pF @ 15 V735 pF @ 10 V4810 pF @ 50 V6000 pF @ 15 V
Power Dissipation (Max)
350mW (Ta)500mW (Ta)960mW (Ta), 1.7W (Tc)3.1W (Ta), 195W (Tc)3.5W (Ta), 7.8W (Tc)
Supplier Device Package
8-SOIC8-VSON-CLIP (5x6)PG-SOT23SOT-23-3SOT-23-3 (TO-236)
Package / Case
8-PowerTDFN8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23
Diodes Incorporated
416,774
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.31827
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
350mA (Ta)
2.5V, 10V
2.8Ohm @ 250mA, 10V
1.5V @ 250µA
0.9 nC @ 10 V
±20V
23.2 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-SOIC
SI4459ADY-T1-GE3
MOSFET P-CH 30V 29A 8SO
Vishay Siliconix
84,220
In Stock
1 : ¥12.64000
Cut Tape (CT)
2,500 : ¥5.69278
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
29A (Tc)
4.5V, 10V
5mOhm @ 15A, 10V
2.5V @ 250µA
195 nC @ 10 V
±20V
6000 pF @ 15 V
-
3.5W (Ta), 7.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-VSON (5x6)
CSD19532Q5B
MOSFET N-CH 100V 100A 8VSON
Texas Instruments
6,705
In Stock
1 : ¥20.03000
Cut Tape (CT)
2,500 : ¥9.04954
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
100A (Ta)
6V, 10V
4.9mOhm @ 17A, 10V
3.2V @ 250µA
62 nC @ 10 V
±20V
4810 pF @ 50 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
SOT-23-3
BSS316NH6327XTSA1
MOSFET N-CH 30V 1.4A SOT23-3
Infineon Technologies
598,291
In Stock
1 : ¥1.97000
Cut Tape (CT)
3,000 : ¥0.36093
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
1.4A (Ta)
4.5V, 10V
160mOhm @ 1.4A, 10V
2V @ 3.7µA
0.6 nC @ 5 V
±20V
94 pF @ 15 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2374DS-T1-GE3
MOSFET N-CH 20V 4.5A/5.9A SOT23
Vishay Siliconix
24,818
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥0.84156
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.5A (Ta), 5.9A (Tc)
1.8V, 4.5V
30mOhm @ 4A, 4.5V
1V @ 250µA
20 nC @ 10 V
±8V
735 pF @ 10 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.