Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedonsemiToshiba Semiconductor and Storage
Series
-π-MOSV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V60 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)220mA (Ta)650mA (Ta)4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.7V, 4.5V3V, 5V5V, 10V
Rds On (Max) @ Id, Vgs
45mOhm @ 4A, 4.5V1.8Ohm @ 150mA, 5V4Ohm @ 400mA, 4.5V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
1V @ 250µA1.06V @ 250µA2V @ 1mA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.7 nC @ 4.5 V1.5 nC @ 5 V6.8 nC @ 4.5 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
9.5 pF @ 10 V50 pF @ 25 V60 pF @ 12 V634 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)370mW (Ta)800mW (Ta)1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
SOT-23-3SOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
377,621
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDV301N
MOSFET N-CH 25V 220MA SOT23
onsemi
294,186
In Stock
1 : ¥2.71000
Cut Tape (CT)
3,000 : ¥0.45080
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
220mA (Ta)
2.7V, 4.5V
4Ohm @ 400mA, 4.5V
1.06V @ 250µA
0.7 nC @ 4.5 V
±8V
9.5 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP2045U-7
MOSFET P-CH 20V 4.3A SOT23
Diodes Incorporated
71,819
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.65386
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.3A (Ta)
1.8V, 4.5V
45mOhm @ 4A, 4.5V
1V @ 250µA
6.8 nC @ 4.5 V
±8V
634 pF @ 10 V
-
800mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
31,412
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥0.93731
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
650mA (Ta)
3V, 5V
1.8Ohm @ 150mA, 5V
2V @ 1mA
1.5 nC @ 5 V
±12V
60 pF @ 12 V
-
1W (Ta)
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.