Single FETs, MOSFETs

Results: 2
Series
MDmesh™ M2MDmesh™ V
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
8A (Tc)12A (Tc)
Rds On (Max) @ Id, Vgs
299mOhm @ 6A, 10V500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.5 nC @ 10 V45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 100 V1250 pF @ 100 V
Power Dissipation (Max)
85W (Tc)90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DPAK
STD16N65M5
MOSFET N-CH 650V 12A DPAK
STMicroelectronics
7,942
In Stock
1 : ¥23.23000
Cut Tape (CT)
2,500 : ¥11.30180
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
12A (Tc)
10V
299mOhm @ 6A, 10V
5V @ 250µA
45 nC @ 10 V
±25V
1250 pF @ 100 V
-
90W (Tc)
150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD12N65M2
MOSFET N-CH 650V 8A DPAK
STMicroelectronics
1,763
In Stock
1 : ¥12.97000
Cut Tape (CT)
2,500 : ¥5.38061
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
650 V
8A (Tc)
10V
500mOhm @ 4A, 10V
4V @ 250µA
16.5 nC @ 10 V
±25V
535 pF @ 100 V
-
85W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.