Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Ta)2A (Tc)13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
134mOhm @ 4A, 10V220mOhm @ 1.6A, 10V240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.5 nC @ 4.5 V8.3 nC @ 10 V55 nC @ 10 V
Vgs (Max)
±8V±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V401 pF @ 25 V1480 pF @ 50 V
Power Dissipation (Max)
1.3W (Ta)3W (Tc)3.7W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)
Supplier Device Package
PowerPAK® 1212-8SOT-23-3SOT-23-3 (TO-236)
Package / Case
PowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMN10H220L-7
MOSFET N-CH 100V 1.4A SOT23
Diodes Incorporated
106,589
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥1.12975
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
1.4A (Ta)
4.5V, 10V
220mOhm @ 1.6A, 10V
2.5V @ 250µA
8.3 nC @ 10 V
±16V
401 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SQ2364EES-T1_GE3
MOSFET N-CH 60V 2A SOT23-3
Vishay Siliconix
24,185
In Stock
1 : ¥5.25000
Cut Tape (CT)
3,000 : ¥1.77589
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2A (Tc)
1.5V, 4.5V
240mOhm @ 2A, 4.5V
1V @ 250µA
2.5 nC @ 4.5 V
±8V
330 pF @ 25 V
-
3W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SI7113DN-T1-GE3
MOSFET P-CH 100V 13.2A PPAK
Vishay Siliconix
17,328
In Stock
1 : ¥13.14000
Cut Tape (CT)
3,000 : ¥5.43287
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
13.2A (Tc)
4.5V, 10V
134mOhm @ 4A, 10V
3V @ 250µA
55 nC @ 10 V
±20V
1480 pF @ 50 V
-
3.7W (Ta), 52W (Tc)
-50°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.