Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

RSF015N06TL MOSFET N-CH 60V 1.5A TUMT3 Rohm Semiconductor	14,890 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥1.14963 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	1.5A (Ta)	4V, 10V	290mOhm @ 1.5A, 10V	2.5V @ 1mA	2 nC @ 5 V	±20V	110 pF @ 10 V	-	800mW (Ta)	150°C (TJ)	-	-	Surface Mount	TUMT3	3-SMD, Flat Leads
TPH7R006PL,L1Q MOSFET N-CH 60V 60A 8SOP Toshiba Semiconductor and Storage	1,587 In Stock	1 : ¥9.85000 Cut Tape (CT) 5,000 : ¥2.34510 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	60A (Tc)	4.5V, 10V	13.5mOhm @ 10A, 4.5V	2.5V @ 200µA	22 nC @ 10 V	±20V	1875 pF @ 30 V	-	81W (Tc)	175°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
SQM120P04-04L_GE3 MOSFET P-CH 40V 120A TO263 Vishay Siliconix	876 In Stock	1 : ¥28.73000 Cut Tape (CT) 800 : ¥17.33674 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	4mOhm @ 30A, 10V	2.5V @ 250µA	330 nC @ 10 V	±20V	13980 pF @ 20 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.