Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
60 V200 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V10V
Rds On (Max) @ Id, Vgs
11.5mOhm @ 60A, 10V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 270µA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V5094 pF @ 50 V
Power Dissipation (Max)
200mW (Ta)313W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-323TO-247AC
Package / Case
SC-70, SOT-323TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
2N7002W-7-F
MOSFET N-CH 60V 115MA SOT323
Diodes Incorporated
268,806
In Stock
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52275
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
TO-247-3 AC EP
IRF200P223
MOSFET N-CH 200V 100A TO247AC
Infineon Technologies
2,474
In Stock
1 : ¥54.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
100A (Tc)
10V
11.5mOhm @ 60A, 10V
4V @ 270µA
102 nC @ 10 V
±20V
5094 pF @ 50 V
-
313W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.