Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedToshiba Semiconductor and Storage
Series
-U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
55mOhm @ 3A, 4.5V80mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 1mA
Vgs (Max)
±8V±12V
Input Capacitance (Ciss) (Max) @ Vds
627 pF @ 10 V630 pF @ 10 V
Power Dissipation (Max)
1W (Ta)1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3SOT-23F
Package / Case
SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMP2160U-7
MOSFET P-CH 20V 3.2A SOT23-3
Diodes Incorporated
58,140
In Stock
1,275,000
Factory
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.65383
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.8V, 4.5V
80mOhm @ 1.5A, 4.5V
900mV @ 250µA
-
±12V
627 pF @ 10 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
17,427
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.63492
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
55mOhm @ 3A, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
±8V
630 pF @ 10 V
-
1W (Ta)
150°C (TJ)
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.