Single FETs, MOSFETs

Results: 4
Manufacturer
Infineon TechnologiesonsemiTaiwan Semiconductor Corporation
Series
-HEXFET®PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V60 V150 V
Current - Continuous Drain (Id) @ 25°C
240mA (Ta)320mA (Ta)5A (Ta), 27A (Tc)42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
20mOhm @ 42A, 10V52mOhm @ 5A, 10V1.6Ohm @ 500mA, 10V2.5Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 250µA2.5V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.68 nC @ 4.5 V0.7 nC @ 4.5 V16 nC @ 10 V180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
24.5 pF @ 20 V30 pF @ 30 V985 pF @ 75 V3500 pF @ 25 V
Power Dissipation (Max)
298mW (Ta)300mW (Ta)3.1W (Ta), 89W (Tc)170W (Tc)
Supplier Device Package
D2PAKSOT-23-3 (TO-236)SOT-323TO-252AA
Package / Case
SC-70, SOT-323TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
onsemi
247,180
In Stock
1 : ¥1.81000
Cut Tape (CT)
3,000 : ¥0.29870
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-252AA
FDD86252
MOSFET N-CH 150V 5A/27A DPAK
onsemi
63,715
In Stock
1 : ¥8.62000
Cut Tape (CT)
2,500 : ¥4.60980
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
5A (Ta), 27A (Tc)
6V, 10V
52mOhm @ 5A, 10V
4V @ 250µA
16 nC @ 10 V
±20V
985 pF @ 75 V
-
3.1W (Ta), 89W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF4905STRLPBF
MOSFET P-CH 55V 42A D2PAK
Infineon Technologies
8,124
In Stock
1 : ¥22.25000
Cut Tape (CT)
800 : ¥12.42841
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
42A (Tc)
10V
20mOhm @ 42A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
3500 pF @ 25 V
-
170W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
4,930
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.26537
Tube
-
Cut Tape (CT)
Digi-Reel®
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
240mA (Ta)
4.5V, 10V
2.5Ohm @ 240mA, 10V
2.5V @ 250µA
0.68 nC @ 4.5 V
±20V
30 pF @ 30 V
-
298mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.