Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V30 V
Current - Continuous Drain (Id) @ 25°C
3.7A (Ta)7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 5.1A, 4.5V50mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs
12.6 nC @ 10 V25 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V1225 pF @ 6 V
Power Dissipation (Max)
1.1W (Ta)1.25W (Ta), 2.5W (Tc)
Supplier Device Package
SOT-23-3 (TO-236)SOT-23-6
Package / Case
SOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2333CDS-T1-GE3
MOSFET P-CH 12V 7.1A SOT23-3
Vishay Siliconix
18,015
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.65846
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
12 V
7.1A (Tc)
1.8V, 4.5V
35mOhm @ 5.1A, 4.5V
1V @ 250µA
25 nC @ 4.5 V
±8V
1225 pF @ 6 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-6
ZXMN3A03E6TA
MOSFET N-CH 30V 3.7A SOT-23-6
Diodes Incorporated
31,328
In Stock
18,000
Factory
1 : ¥6.65000
Cut Tape (CT)
3,000 : ¥2.52802
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.7A (Ta)
4.5V, 10V
50mOhm @ 7.8A, 10V
1V @ 250µA
12.6 nC @ 10 V
±20V
600 pF @ 25 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.