Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.STMicroelectronics
Series
-DeepGATE™, STripFET™ H6DeepGATE™, STripFET™ VIHEXFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta), 300mA (Tc)2.7A (Ta)3.2A (Ta)3.7A (Ta)4A (Ta)6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 3A, 10V50mOhm @ 7.8A, 10V56mOhm @ 2A, 10V100mOhm @ 2.2A, 10V100mOhm @ 2.7A, 4.5V4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.25V @ 250µA2.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V3.6 nC @ 4.5 V5.3 nC @ 4.5 V6 nC @ 4.5 V9.6 nC @ 10 V12.6 nC @ 10 V
Vgs (Max)
±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V210 pF @ 25 V250 pF @ 10 V283 pF @ 24 V600 pF @ 25 V639 pF @ 25 V
Power Dissipation (Max)
265mW (Ta), 1.33W (Tc)1.08W (Ta)1.1W (Ta)1.6W (Ta)1.6W (Tc)1.7W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
Micro6™(TSOP-6)SOT-23-3SOT-23-6TO-236AB
Package / Case
SOT-23-6TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
74,420
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP2215L-7
MOSFET P-CH 20V 2.7A SOT23-3
Diodes Incorporated
59,608
In Stock
45,000
Factory
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.79323
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
2.7A (Ta)
2.5V, 4.5V
100mOhm @ 2.7A, 4.5V
1.25V @ 250µA
5.3 nC @ 4.5 V
±12V
250 pF @ 10 V
-
1.08W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-6
IRLMS1503TRPBF
MOSFET N-CH 30V 3.2A MICRO6
Infineon Technologies
36,698
In Stock
1 : ¥4.52000
Cut Tape (CT)
3,000 : ¥1.51775
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.2A (Ta)
4.5V, 10V
100mOhm @ 2.2A, 10V
1V @ 250µA
9.6 nC @ 10 V
±20V
210 pF @ 25 V
-
1.7W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro6™(TSOP-6)
SOT-23-6
SOT-23-6
STT6N3LLH6
MOSFET N-CH 30V 6A SOT23-6
STMicroelectronics
36,069
In Stock
1 : ¥4.93000
Cut Tape (CT)
3,000 : ¥1.87866
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Tc)
4.5V, 10V
25mOhm @ 3A, 10V
1V @ 250µA
3.6 nC @ 4.5 V
±20V
283 pF @ 24 V
-
1.6W (Tc)
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
SOT-23-6
STT4P3LLH6
MOSFET P-CH 30V 4A SOT23-6
STMicroelectronics
18,124
In Stock
1 : ¥5.17000
Cut Tape (CT)
3,000 : ¥1.73790
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
4A (Ta)
4.5V, 10V
56mOhm @ 2A, 10V
2.5V @ 250µA
6 nC @ 4.5 V
±20V
639 pF @ 25 V
-
1.6W (Ta)
150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
SOT-23-6
ZXMN3A03E6TA
MOSFET N-CH 30V 3.7A SOT-23-6
Diodes Incorporated
31,328
In Stock
18,000
Factory
1 : ¥6.65000
Cut Tape (CT)
3,000 : ¥2.52793
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.7A (Ta)
4.5V, 10V
50mOhm @ 7.8A, 10V
1V @ 250µA
12.6 nC @ 10 V
±20V
600 pF @ 25 V
-
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.