Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesNexperia USA Inc.
Series
-HEXFET®HEXFET®, StrongIRFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V55 V60 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)47A (Tc)195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
2mOhm @ 100A, 10V22mOhm @ 25A, 10V7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2V @ 250µA2.1V @ 250µA3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.35 nC @ 5 V48 nC @ 5 V411 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 25 V1700 pF @ 25 V13703 pF @ 25 V
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)3.8W (Ta), 110W (Tc)375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
D2PAKDFN1006B-3PG-TO263-2
Package / Case
3-XFDFNTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLZ44NSTRLPBF
MOSFET N-CH 55V 47A D2PAK
Infineon Technologies
673
In Stock
1 : ¥12.56000
Cut Tape (CT)
800 : ¥6.78940
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
55 V
47A (Tc)
4V, 10V
22mOhm @ 25A, 10V
2V @ 250µA
48 nC @ 5 V
±16V
1700 pF @ 25 V
-
3.8W (Ta), 110W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
3-XQFN
BSS84AKMB,315
MOSFET P-CH 50V 230MA DFN1006B-3
Nexperia USA Inc.
31,782
In Stock
1 : ¥3.20000
Cut Tape (CT)
10,000 : ¥0.47630
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
230mA (Ta)
10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
360mW (Ta), 2.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS7530TRLPBF
MOSFET N CH 60V 195A D2PAK
Infineon Technologies
8,519
In Stock
1 : ¥26.93000
Cut Tape (CT)
800 : ¥12.58050
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
195A (Tc)
6V, 10V
2mOhm @ 100A, 10V
3.7V @ 250µA
411 nC @ 10 V
±20V
13703 pF @ 25 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.