Single FETs, MOSFETs

Results: 3
Manufacturer
onsemiRohm SemiconductorVishay Siliconix
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)10A (Ta)12A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V10V
Rds On (Max) @ Id, Vgs
9.7mOhm @ 12A, 10V84mOhm @ 10A, 10V540mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA3V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V15.2 nC @ 10 V26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V1200 pF @ 30 V1850 pF @ 20 V
Power Dissipation (Max)
2.3W (Ta), 30W (Tc)26W (Ta)43W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-MLP (3.3x3.3)TO-220ABTO-252
Package / Case
8-PowerWDFNTO-220-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
Showing
of 3
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8 POWER WDFN
FDMC8327L
MOSFET N-CH 40V 12A/14A 8MLP
onsemi
10,882
In Stock
1 : ¥9.44000
Cut Tape (CT)
3,000 : ¥3.89919
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
12A (Ta), 14A (Tc)
4.5V, 10V
9.7mOhm @ 12A, 10V
3V @ 250µA
26 nC @ 10 V
±20V
1850 pF @ 20 V
-
2.3W (Ta), 30W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
TO-220AB
IRF510PBF
MOSFET N-CH 100V 5.6A TO220AB
Vishay Siliconix
46,112
In Stock
1 : ¥6.24000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
5.6A (Tc)
10V
540mOhm @ 3.4A, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
43W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
RB098BM-40FNSTL
RD3L01BATTL1
PCH -60V -10A POWER MOSFET - RD3
Rohm Semiconductor
3,880
In Stock
1 : ¥9.11000
Cut Tape (CT)
2,500 : ¥3.78035
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
10A (Ta)
4.5V, 10V
84mOhm @ 10A, 10V
2.5V @ 1mA
15.2 nC @ 10 V
±20V
1200 pF @ 30 V
-
26W (Ta)
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.