Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesonsemiRohm Semiconductor
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V45 V60 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)8A (Ta)50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4V4V, 10V4.5V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 50A, 10V91mOhm @ 8A, 10V1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
1.4V @ 250µA2.2V @ 35µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.15 nC @ 5 V9 nC @ 5 V64 nC @ 10 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 5 V1000 pF @ 10 V4780 pF @ 25 V
Power Dissipation (Max)
690mW (Ta)15W (Tc)71W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
PG-TO252-3-11SOT-23-3 (TO-236)TO-252
Package / Case
TO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR4003NT3G
MOSFET N-CH 30V 500MA SOT23-3
onsemi
238,870
In Stock
1 : ¥2.79000
Cut Tape (CT)
10,000 : ¥0.42055
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
500mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.4V @ 250µA
1.15 nC @ 5 V
±20V
21 pF @ 5 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
RB098BM-40FNSTL
RD3H080SPTL1
MOSFET P-CH 45V 8A TO252
Rohm Semiconductor
2,359
In Stock
1 : ¥10.02000
Cut Tape (CT)
2,500 : ¥4.13109
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
45 V
8A (Ta)
4V, 10V
91mOhm @ 8A, 10V
3V @ 1mA
9 nC @ 5 V
±20V
1000 pF @ 10 V
-
15W (Tc)
150°C (TJ)
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IPD50N06S4L08ATMA2
MOSFET N-CH 60V 50A TO252-31
Infineon Technologies
6,828
In Stock
1 : ¥10.67000
Cut Tape (CT)
2,500 : ¥4.00828
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
7.8mOhm @ 50A, 10V
2.2V @ 35µA
64 nC @ 10 V
±16V
4780 pF @ 25 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PG-TO252-3-11
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.