Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedInfineon Technologiesonsemi
Series
-CoolSiC™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
20 V50 V650 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)1.3A (Ta)58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V10V18V
Rds On (Max) @ Id, Vgs
42mOhm @ 29.5A, 18V160mOhm @ 1.5A, 4.5V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs
5 nC @ 4.5 V48 nC @ 18 V
Vgs (Max)
±8V+20V, -2V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V162 pF @ 10 V1643 pF @ 400 V
Power Dissipation (Max)
300mW (Ta)500mW (Ta)197W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-TO247-3-41SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
3Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138-7-F
MOSFET N-CH 50V 200MA SOT23-3
Diodes Incorporated
205,646
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.28094
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
NDS331N
MOSFET N-CH 20V 1.3A SUPERSOT3
onsemi
153,194
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20594
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
1.3A (Ta)
2.7V, 4.5V
160mOhm @ 1.5A, 4.5V
1V @ 250µA
5 nC @ 4.5 V
±8V
162 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
IMW65R030M1HXKSA1
IMW65R030M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Infineon Technologies
245
In Stock
1 : ¥109.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
58A (Tc)
18V
42mOhm @ 29.5A, 18V
5.7V @ 8.8mA
48 nC @ 18 V
+20V, -2V
1643 pF @ 400 V
-
197W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.