Single FETs, MOSFETs

Results: 2
Manufacturer
Infineon TechnologiesTexas Instruments
Series
NexFET™OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
14.9A (Ta), 90A (Tc)44A (Tc)
Rds On (Max) @ Id, Vgs
6mOhm @ 50A, 10V15.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.4V @ 250µA3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 50 V4900 pF @ 50 V
Power Dissipation (Max)
3.2W (Ta), 63W (Tc)125W (Tc)
Supplier Device Package
8-VSONP (5x6)PG-TDSON-8-1
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD19534Q5A
MOSFET N-CH 100V 50A 8VSON
Texas Instruments
13,634
In Stock
1 : ¥8.29000
Cut Tape (CT)
2,500 : ¥3.42950
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
44A (Tc)
6V, 10V
15.1mOhm @ 10A, 10V
3.4V @ 250µA
22 nC @ 10 V
±20V
1680 pF @ 50 V
-
3.2W (Ta), 63W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
PG-TDSON-8-1
BSC060N10NS3GATMA1
MOSFET N-CH 100V 14.9/90A 8TDSON
Infineon Technologies
12,747
In Stock
1 : ¥20.28000
Cut Tape (CT)
5,000 : ¥8.81569
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
14.9A (Ta), 90A (Tc)
6V, 10V
6mOhm @ 50A, 10V
3.5V @ 90µA
68 nC @ 10 V
±20V
4900 pF @ 50 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.