Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

FDS4685 MOSFET P-CH 40V 8.2A 8SOIC onsemi	20,330 In Stock 12,500 Factory	1 : ¥8.87000 Cut Tape (CT) 2,500 : ¥3.65248 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	8.2A (Ta)	4.5V, 10V	27mOhm @ 8.2A, 10V	3V @ 250µA	27 nC @ 5 V	±20V	1872 pF @ 20 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
CSD25310Q2 MOSFET P-CH 20V 20A 6WSON Texas Instruments	44,282 In Stock	1 : ¥3.45000 Cut Tape (CT) 3,000 : ¥1.38540 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	20 V	20A (Ta)	1.8V, 4.5V	23.9mOhm @ 5A, 4.5V	1.1V @ 250µA	4.7 nC @ 4.5 V	±8V	655 pF @ 10 V	-	2.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad
SSM3K123TU,LF MOSFET N-CH 20V 4.2A UFM Toshiba Semiconductor and Storage	4,363 In Stock	1 : ¥4.84000 Cut Tape (CT) 3,000 : ¥1.10934 Tape & Reel (TR)	U-MOSIII	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	1.5V, 4V	28mOhm @ 3A, 4V	1V @ 1mA	13.6 nC @ 4 V	±10V	1010 pF @ 10 V	-	500mW (Ta)	150°C (TJ)	Surface Mount	UFM	3-SMD, Flat Leads

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.