Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V150 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta), 20A (Tc)12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V7V, 10V
Rds On (Max) @ Id, Vgs
94mOhm @ 10A, 10V115mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4.6V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
985 pF @ 75 V1185 pF @ 30 V
Power Dissipation (Max)
2.5W (Ta), 100W (Tc)2.5W (Ta), 50W (Tc)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
135,090
In Stock
1 : ¥5.17000
Cut Tape (CT)
2,500 : ¥1.73667
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
12A (Tc)
4.5V, 10V
115mOhm @ 12A, 10V
3V @ 250µA
20 nC @ 10 V
±20V
1185 pF @ 30 V
-
2.5W (Ta), 50W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252, (D-Pak)
AOD4454
MOSFET N-CH 150V 3A/20A TO252
Alpha & Omega Semiconductor Inc.
0
In Stock
Check Lead Time
2,500 : ¥3.66706
Tape & Reel (TR)
-
Tape & Reel (TR)
Active
N-Channel
MOSFET (Metal Oxide)
150 V
3A (Ta), 20A (Tc)
7V, 10V
94mOhm @ 10A, 10V
4.6V @ 250µA
20 nC @ 10 V
±20V
985 pF @ 75 V
-
2.5W (Ta), 100W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.