Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Series
-PowerTrench®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
6.3A (Ta)9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
14mOhm @ 9A, 4.5V25mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V21.5 nC @ 4.5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 15 V1788 pF @ 10 V
Power Dissipation (Max)
610mW (Ta)1.6W (Ta)
Supplier Device Package
SuperSOT™-6X1-DFN1616-6 (Type E)
Package / Case
6-PowerUFDFNSOT-23-6 Thin, TSOT-23-6
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SG6858TZ
FDC655BN
MOSFET N-CH 30V 6.3A SUPERSOT6
onsemi
34,044
In Stock
1 : ¥3.78000
Cut Tape (CT)
3,000 : ¥1.27931
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6.3A (Ta)
4.5V, 10V
25mOhm @ 6.3A, 10V
3V @ 250µA
15 nC @ 10 V
±20V
570 pF @ 15 V
-
1.6W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT™-6
SOT-23-6 Thin, TSOT-23-6
X1-DFN1616-6
DMN2020UFCL-7
MOSFET N-CH 20V 9A X1-DFN1616-6
Diodes Incorporated
4,896
In Stock
918,000
Factory
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥1.07636
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
9A (Ta)
1.8V, 4.5V
14mOhm @ 9A, 4.5V
900mV @ 250µA
21.5 nC @ 4.5 V
±10V
1788 pF @ 10 V
-
610mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
X1-DFN1616-6 (Type E)
6-PowerUFDFN
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.