Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF540NSTRLPBF MOSFET N-CH 100V 33A D2PAK Infineon Technologies	9,450 In Stock	1 : ¥12.31000 Cut Tape (CT) 800 : ¥6.64328 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
CSD17573Q5B MOSFET N-CH 30V 100A 8VSON Texas Instruments	3,389 In Stock	1 : ¥13.55000 Cut Tape (CT) 2,500 : ¥5.61091 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Ta)	4.5V, 10V	1mOhm @ 35A, 10V	1.8V @ 250µA	64 nC @ 4.5 V	±20V	9000 pF @ 15 V	-	3.2W (Ta), 195W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
IPB720P15LMATMA1 TRENCH >=100V PG-TO263-3 Infineon Technologies	1,545 In Stock	1 : ¥38.01000 Cut Tape (CT) 1,000 : ¥19.65608 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	150 V	4.6A (Ta), 41A (Tc)	4.5V, 10V	72mOhm @ 37A, 10V	2V @ 5.55mA	224 nC @ 10 V	±20V	11000 pF @ 75 V	-	3.8W (Ta), 300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MCTL300N10Y-TP MOSFET N-CH 100V 300A TOLL-8L Micro Commercial Co	43,167 In Stock	1 : ¥37.60000 Cut Tape (CT) 2,000 : ¥24.96643 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	300A (Tc)	-	1.45mOhm @ 30A, 10V	4V @ 250µA	240 nC @ 10 V	±20V	13258 pF @ 50 V	-	500W	-55°C ~ 150°C (TJ)	Surface Mount	TOLL-8L	8-PowerSFN
IRLR2905TRPBF MOSFET N-CH 55V 42A DPAK Infineon Technologies	1 In Stock	1 : ¥16.50000 Cut Tape (CT) 2,000 : ¥4.78230 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	4V, 10V	27mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.