Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
500mA (Tc)2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
43mOhm @ 1A, 4.5V340mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.71 nC @ 4.5 V17 nC @ 8 V
Vgs (Max)
±5V±8V
Power Dissipation (Max)
500mW (Ta)1.25W (Ta)
Supplier Device Package
4-MicrofootPowerPAK® 0806
Package / Case
4-XFBGAPowerPAK® 0806
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK-0806
SIUD412ED-T1-GE3
MOSFET N-CH 12V 500MA PPAK 0806
Vishay Siliconix
97,906
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥0.72038
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
500mA (Tc)
1.2V, 4.5V
340mOhm @ 500mA, 4.5V
900mV @ 250µA
0.71 nC @ 4.5 V
±5V
21 pF @ 6 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 0806
PowerPAK® 0806
4-XFBGA
SI8806DB-T2-E1
MOSFET N-CH 12V 4MICROFOOT
Vishay Siliconix
4,120
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.22300
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
12 V
2.8A (Ta)
1.8V, 4.5V
43mOhm @ 1A, 4.5V
1V @ 250µA
17 nC @ 8 V
±8V
-
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
4-Microfoot
4-XFBGA
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.