Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSZ110N06NS3GATMA1 MOSFET N-CH 60V 20A 8TSDSON Infineon Technologies	9,350 In Stock	1 : ¥7.06000 Cut Tape (CT) 5,000 : ¥2.78209 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	20A (Tc)	10V	11mOhm @ 20A, 10V	4V @ 23µA	33 nC @ 10 V	±20V	2700 pF @ 30 V	-	2.1W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerVDFN
IRF640NSTRLPBF MOSFET N-CH 200V 18A D2PAK Infineon Technologies	34,506 In Stock	1 : ¥12.89000 Cut Tape (CT) 800 : ¥7.19625 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP4015SPSQ-13 MOSFET P-CH 40V 8.5A PWRDI5060-8 Diodes Incorporated	2,118 In Stock 795,000 Factory	1 : ¥7.72000 Cut Tape (CT) 2,500 : ¥3.29093 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	40 V	8.5A (Ta)	4.5V, 10V	11mOhm @ 9.8A, 10V	2.5V @ 250µA	47.5 nC @ 5 V	±25V	4234 pF @ 20 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.