Single FETs, MOSFETs

Results: 10
Manufacturer
Texas InstrumentsVishay Siliconix
Series
NexFET™TrenchFET® Gen III
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V60 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 50A (Tc)15A (Ta), 50A (Tc)17A (Ta), 100A (Tc)31A (Ta), 100A (Tc)32A (Ta), 100A (Tc)60A (Tc)100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V4.5V, 10V
Rds On (Max) @ Id, Vgs
1mOhm @ 35A, 10V2.2mOhm @ 28A, 10V2.4mOhm @ 25A, 8V3.2mOhm @ 25A, 10V3.6mOhm @ 20A, 10V5.9mOhm @ 18A, 10V6.6mOhm @ 17A, 10V6.8mOhm @ 18A, 10V9.8mOhm @ 14A, 10V9.9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
1.6V @ 250µA1.8V @ 250µA2.2V @ 250µA2.3V @ 250µA2.4V @ 250µA2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V19 nC @ 10 V20 nC @ 10 V22 nC @ 10 V23 nC @ 4.5 V36 nC @ 10 V53 nC @ 10 V58 nC @ 10 V64 nC @ 4.5 V330 nC @ 10 V
Vgs (Max)
+10V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 30 V1500 pF @ 30 V1656 pF @ 20 V1770 pF @ 30 V2750 pF @ 30 V3420 pF @ 15 V4230 pF @ 30 V5070 pF @ 30 V9000 pF @ 15 V12900 pF @ 20 V
Power Dissipation (Max)
3.1W (Ta), 195W (Tc)3.1W (Ta), 77W (Tc)3.2W (Ta)3.2W (Ta), 116W (Tc)3.2W (Ta), 156W (Tc)3.2W (Ta), 195W (Tc)6.25W (Ta), 104W (Tc)66W (Tc)
Supplier Device Package
8-VSON-CLIP (5x6)8-VSONP (3x3.3)8-VSONP (5x6)PowerPAK® SO-8
Package / Case
8-PowerTDFN8-PowerVDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
10Results
Showing
of 10
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-Power TDFN
CSD18543Q3A
MOSFET N-CH 60V 60A 8VSON
Texas Instruments
35,767
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,500 : ¥2.82897
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
60A (Tc)
4.5V, 10V
9.9mOhm @ 12A, 10V
2.7V @ 250µA
14.5 nC @ 10 V
±20V
1150 pF @ 30 V
-
66W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
8-Power TDFN
CSD18534Q5A
MOSFET N-CH 60V 13A/50A 8VSON
Texas Instruments
29,044
In Stock
1 : ¥7.72000
Cut Tape (CT)
2,500 : ¥3.19181
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
13A (Ta), 50A (Tc)
4.5V, 10V
9.8mOhm @ 14A, 10V
2.3V @ 250µA
22 nC @ 10 V
±20V
1770 pF @ 30 V
-
3.1W (Ta), 77W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD18504Q5A
MOSFET N-CH 40V 15A/50A 8VSON
Texas Instruments
9,416
In Stock
1 : ¥8.95000
Cut Tape (CT)
2,500 : ¥3.71244
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
15A (Ta), 50A (Tc)
4.5V, 10V
6.6mOhm @ 17A, 10V
2.4V @ 250µA
19 nC @ 10 V
±20V
1656 pF @ 20 V
-
3.1W (Ta), 77W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD18533Q5A
MOSFET N-CH 60V 17A/100A 8VSON
Texas Instruments
9,516
In Stock
1 : ¥10.51000
Cut Tape (CT)
2,500 : ¥4.34381
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
17A (Ta), 100A (Tc)
4.5V, 10V
5.9mOhm @ 18A, 10V
2.3V @ 250µA
36 nC @ 10 V
±20V
2750 pF @ 30 V
-
3.2W (Ta), 116W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD18563Q5A
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
47,609
In Stock
1 : ¥11.74000
Cut Tape (CT)
2,500 : ¥4.86694
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
6.8mOhm @ 18A, 10V
2.4V @ 250µA
20 nC @ 10 V
±20V
1500 pF @ 30 V
-
3.2W (Ta), 116W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
8-Power TDFN
CSD17573Q5B
MOSFET N-CH 30V 100A 8VSON
Texas Instruments
3,389
In Stock
1 : ¥13.55000
Cut Tape (CT)
2,500 : ¥5.61091
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
100A (Ta)
4.5V, 10V
1mOhm @ 35A, 10V
1.8V @ 250µA
64 nC @ 4.5 V
±20V
9000 pF @ 15 V
-
3.2W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
PowerPAK SO-8
SI7155DP-T1-GE3
MOSFET P-CH 40V 31A/100A PPAK
Vishay Siliconix
26,943
In Stock
1 : ¥16.34000
Cut Tape (CT)
3,000 : ¥7.37016
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
31A (Ta), 100A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
2.3V @ 250µA
330 nC @ 10 V
±20V
12900 pF @ 20 V
-
6.25W (Ta), 104W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
8-Power TDFN
CSD18532Q5B
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
6,651
In Stock
1 : ¥18.14000
Cut Tape (CT)
2,500 : ¥8.19089
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
3.2mOhm @ 25A, 10V
2.2V @ 250µA
58 nC @ 10 V
±20V
5070 pF @ 30 V
-
3.2W (Ta), 156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSONP (5x6)
8-PowerTDFN
CSD18540Q5B
CSD18540Q5B
MOSFET N-CH 60V 100A 8VSON
Texas Instruments
4,839
In Stock
1 : ¥19.38000
Cut Tape (CT)
2,500 : ¥8.74935
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Ta)
4.5V, 10V
2.2mOhm @ 28A, 10V
2.3V @ 250µA
53 nC @ 10 V
±20V
4230 pF @ 30 V
-
3.1W (Ta), 195W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
8-Power TDFN
CSD17303Q5
MOSFET N-CH 30V 32A/100A 8VSON
Texas Instruments
5,069
In Stock
1 : ¥13.79000
Cut Tape (CT)
2,500 : ¥6.21991
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta), 100A (Tc)
3V, 8V
2.4mOhm @ 25A, 8V
1.6V @ 250µA
23 nC @ 4.5 V
+10V, -8V
3420 pF @ 15 V
-
3.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-VSON-CLIP (5x6)
8-PowerTDFN
Showing
of 10

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.