Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLU024NPBF MOSFET N-CH 55V 17A IPAK Infineon Technologies	3,285 In Stock	1 : ¥6.98000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	4V, 10V	65mOhm @ 10A, 10V	2V @ 250µA	15 nC @ 5 V	±16V	480 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IRLU8743PBF MOSFET N-CH 30V 160A IPAK Infineon Technologies	1,221 In Stock	1 : ¥13.46000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	160A (Tc)	4.5V, 10V	3.1mOhm @ 25A, 10V	2.35V @ 100µA	59 nC @ 4.5 V	±20V	4880 pF @ 15 V	-	135W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
IRLU024PBF MOSFET N-CH 60V 14A TO251AA Vishay Siliconix	2,385 In Stock	1 : ¥13.46000 Tube	-	Tube	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	60 V	14A (Tc)	4V, 5V	100mOhm @ 8.4A, 5V	2V @ 250µA	18 nC @ 5 V	±10V	870 pF @ 25 V	-	2.5W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPAK, TO-251AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.