Single FETs, MOSFETs

Results: 2
Manufacturer
Rohm SemiconductorVishay Siliconix
Series
-TrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)15.3A (Ta), 38.3A (Tc)
Rds On (Max) @ Id, Vgs
7.5mOhm @ 10A, 10V5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA2.5V @ 100µA
Vgs (Max)
+20V, -16V±20V
Input Capacitance (Ciss) (Max) @ Vds
34 pF @ 30 V1000 pF @ 15 V
Power Dissipation (Max)
200mW (Ta)3.2W (Ta), 19.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PowerPAK® 1212-8SST3
Package / Case
PowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SBA120CS-AUR1A1XXX
BSS84T116
MOSFET P-CH 60V 230MA SST3
Rohm Semiconductor
11,755
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60971
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
5.3Ohm @ 230mA, 10V
2.5V @ 100µA
-
±20V
34 pF @ 30 V
-
200mW (Ta)
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
PowerPAK 1212-8
SIS472BDN-T1-GE3
MOSFET N-CH 30V 15.3A/38.3A PPAK
Vishay Siliconix
2,236
In Stock
1 : ¥5.09000
Cut Tape (CT)
3,000 : ¥1.71229
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
15.3A (Ta), 38.3A (Tc)
4.5V, 10V
7.5mOhm @ 10A, 10V
2.4V @ 250µA
21.5 nC @ 10 V
+20V, -16V
1000 pF @ 15 V
-
3.2W (Ta), 19.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.