Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

SIA446DJ-T1-GE3 MOSFET N-CH 150V 7.7A PPAK SC70 Vishay Siliconix	11,062 In Stock	1 : ¥5.01000 Cut Tape (CT) 3,000 : ¥1.91420 Tape & Reel (TR)	ThunderFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	7.7A (Tc)	6V, 10V	177mOhm @ 3A, 10V	3.5V @ 250µA	8 nC @ 10 V	±20V	230 pF @ 75 V	-	3.5W (Ta), 19W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
STV270N4F3 MOSFET N-CH 40V 270A 10POWERSO STMicroelectronics	1,120 In Stock	1 : ¥45.32000 Cut Tape (CT) 600 : ¥27.36328 Tape & Reel (TR)	STripFET™ III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	40 V	270A (Tc)	10V	1.5mOhm @ 80A, 10V	4V @ 250µA	150 nC @ 10 V	±20V	7500 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	10-PowerSO	PowerSO-10 Exposed Bottom Pad
STP120N4F6 MOSFET N-CH 40V 80A TO220AB STMicroelectronics	0 In Stock Check Lead Time	50 : ¥11.69080 Tube	DeepGATE™, STripFET™ VI	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	80A (Tc)	10V	4.3mOhm @ 40A, 10V	4V @ 250µA	65 nC @ 10 V	±20V	3850 pF @ 25 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.