Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
11.4A (Tc)12A (Tc)
Rds On (Max) @ Id, Vgs
21mOhm @ 8.4A, 10V24mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V50 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
405 pF @ 15 V1350 pF @ 15 V
Power Dissipation (Max)
2.4W (Ta), 5W (Tc)2.5W (Ta), 5W (Tc)
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Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
8-SOIC
SI4435DDY-T1-GE3
MOSFET P-CH 30V 11.4A 8SO
Vishay Siliconix
23,635
In Stock
1 : ¥5.91000
Cut Tape (CT)
2,500 : ¥2.24502
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
11.4A (Tc)
4.5V, 10V
24mOhm @ 9.1A, 10V
3V @ 250µA
50 nC @ 10 V
±20V
1350 pF @ 15 V
-
2.5W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SI4178DY-T1-GE3
MOSFET N-CH 30V 12A 8SO
Vishay Siliconix
2,774
In Stock
1 : ¥5.01000
Cut Tape (CT)
2,500 : ¥1.91420
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
12A (Tc)
4.5V, 10V
21mOhm @ 8.4A, 10V
2.8V @ 250µA
12 nC @ 10 V
±25V
405 pF @ 15 V
-
2.4W (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
Showing
of 2

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.