Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138W MOSFET N-CH 50V 210MA SC70 onsemi	108,456 In Stock	1 : ¥3.69000 Cut Tape (CT) 3,000 : ¥0.65944 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	210mA (Ta)	4.5V, 10V	3.5Ohm @ 220mA, 10V	1.5V @ 1mA	1.1 nC @ 10 V	±20V	38 pF @ 25 V	-	340mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-323	SC-70, SOT-323
BSS84AHZGT116 PCH -60V -0.23A, SOT-23, SMALL S Rohm Semiconductor	8,958 In Stock	1 : ¥3.78000 Cut Tape (CT) 3,000 : ¥0.83119 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	230mA (Ta)	4.5V, 10V	5.3Ohm @ 230mA, 10V	2.5V @ 100µA	-	±20V	34 pF @ 30 V	-	200mW (Ta)	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
BUK7Y4R8-60EX MOSFET N-CH 60V 100A LFPAK56 Nexperia USA Inc.	3,119 In Stock	1 : ¥15.11000 Cut Tape (CT) 1,500 : ¥7.17170 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4.8mOhm @ 25A, 10V	4V @ 1mA	73.1 nC @ 10 V	±20V	5520 pF @ 25 V	-	238W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.