Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF520NPBF MOSFET N-CH 100V 9.7A TO220AB Infineon Technologies	3,210 In Stock	1 : ¥7.55000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	48W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9510PBF MOSFET P-CH 100V 4A TO220AB Vishay Siliconix	923 In Stock	1 : ¥8.78000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	4A (Tc)	10V	1.2Ohm @ 2.4A, 10V	4V @ 250µA	8.7 nC @ 10 V	±20V	200 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF4905LPBF MOSFET P-CH 55V 42A TO262 Infineon Technologies	4,663 In Stock	1 : ¥15.11000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	42A (Tc)	10V	20mOhm @ 42A, 10V	4V @ 250µA	180 nC @ 10 V	±20V	3500 pF @ 25 V	-	170W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.