Single FETs, MOSFETs

Results: 4
Manufacturer
Nexperia USA Inc.Texas Instruments
Series
FemtoFET™NexFET™TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V60 V
Current - Continuous Drain (Id) @ 25°C
320mA (Ta)500mA (Ta)2.2A (Ta)20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 8V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
10.2mOhm @ 8A, 10V65mOhm @ 1A, 10V1190mOhm @ 100mA, 8V1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1.35V @ 2.5µA1.5V @ 250µA1.9V @ 250µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.281 nC @ 10 V0.8 nC @ 4.5 V14 nC @ 10 V15 nC @ 10 V
Vgs (Max)
10V±20V
Input Capacitance (Ciss) (Max) @ Vds
10.5 pF @ 10 V50 pF @ 10 V777 pF @ 30 V998 pF @ 15 V
Power Dissipation (Max)
260mW (Ta), 830mW (Tc)500mW (Ta)3.2W (Ta), 29W (Tc)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)
Supplier Device Package
3-PICOSTAR8-VSONP (3x3.3)SOT-323
Package / Case
3-SMD, No Lead3-XFDFN8-PowerVDFNSC-70, SOT-323
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138PW,115
MOSFET N-CH 60V 320MA SOT323
Nexperia USA Inc.
913,706
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37872
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
320mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
260mW (Ta), 830mW (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
SOT-323
SC-70, SOT-323
CSDxxxxxF3x
CSD15380F3
MOSFET N-CH 20V 500MA 3PICOSTAR
Texas Instruments
37,879
In Stock
1 : ¥2.96000
Cut Tape (CT)
3,000 : ¥0.52674
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
500mA (Ta)
2.8V, 8V
1190mOhm @ 100mA, 8V
1.35V @ 2.5µA
0.281 nC @ 10 V
10V
10.5 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PICOSTAR
3-XFDFN
CSDxxxxxF5x
CSD18541F5
MOSFET N-CH 60V 2.2A 3PICOSTAR
Texas Instruments
8,010
In Stock
1 : ¥3.20000
Cut Tape (CT)
3,000 : ¥0.86373
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
2.2A (Ta)
4.5V, 10V
65mOhm @ 1A, 10V
2.2V @ 250µA
14 nC @ 10 V
±20V
777 pF @ 30 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
3-PICOSTAR
3-SMD, No Lead
8-VSONP
CSD17579Q3A
MOSFET N-CH 30V 20A 8VSON
Texas Instruments
38,374
In Stock
1 : ¥3.37000
Cut Tape (CT)
2,500 : ¥1.34437
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
20A (Ta)
4.5V, 10V
10.2mOhm @ 8A, 10V
1.9V @ 250µA
15 nC @ 10 V
±20V
998 pF @ 15 V
-
3.2W (Ta), 29W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-VSONP (3x3.3)
8-PowerVDFN
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.