Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesonsemiRenesas Electronics CorporationVishay Siliconix
Series
-OptiMOS™PowerTrench®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V250 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Ta)18A (Ta), 56A (Tc)25A (Tc)57A (Tc)90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 18A, 10V5.3mOhm @ 45A, 10V8.5mOhm @ 21A, 10V14.5mOhm @ 14.4A, 10V60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA3V @ 250µA4V @ 110µA4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 6 V29 nC @ 10 V88 nC @ 10 V95 nC @ 10 V190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2090 pF @ 50 V2350 pF @ 100 V6000 pF @ 25 V6705 pF @ 30 V
Power Dissipation (Max)
1.2W (Ta), 147W (Tc)1.9W (Ta)2.3W (Ta), 54W (Tc)54W (Tc)136W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C
Supplier Device Package
8-PQFN (3.3x3.3)PG-TO263-3Power33PowerPAK® SO-8TO-252 (MP-3ZP)
Package / Case
8-PowerWDFNPowerPAK® SO-8TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7461DP-T1-GE3
MOSFET P-CH 60V 8.6A PPAK SO-8
Vishay Siliconix
35,429
In Stock
1 : ¥18.96000
Cut Tape (CT)
3,000 : ¥8.54468
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
8.6A (Ta)
4.5V, 10V
14.5mOhm @ 14.4A, 10V
3V @ 250µA
190 nC @ 10 V
±20V
-
-
1.9W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB600N25N3GATMA1
MOSFET N-CH 250V 25A D2PAK
Infineon Technologies
4,349
In Stock
1 : ¥22.33000
Cut Tape (CT)
1,000 : ¥11.52804
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
250 V
25A (Tc)
10V
60mOhm @ 25A, 10V
4V @ 90µA
29 nC @ 10 V
±20V
2350 pF @ 100 V
-
136W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
8-WDFN
FDMC86184
MOSFET N-CH 100V 57A 8PQFN
onsemi
1,130
In Stock
1 : ¥23.64000
Cut Tape (CT)
3,000 : ¥7.57970
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
57A (Tc)
6V, 10V
8.5mOhm @ 21A, 10V
4V @ 110µA
20 nC @ 6 V
±20V
2090 pF @ 50 V
-
54W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PQFN (3.3x3.3)
8-PowerWDFN
Power33
FDMC86570L
MOSFET N-CH 60V 18A/56A POWER33
onsemi
1,625
In Stock
1 : ¥31.36000
Cut Tape (CT)
3,000 : ¥10.34539
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta), 56A (Tc)
4.5V, 10V
4.3mOhm @ 18A, 10V
3V @ 250µA
88 nC @ 10 V
±20V
6705 pF @ 30 V
-
2.3W (Ta), 54W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Power33
8-PowerWDFN
TO-252-3, DPak Top
NP90N06VDK-E1-AY
POWER TRANSISTOR N-CH AUTO POWER
Renesas Electronics Corporation
5,651
In Stock
1 : ¥16.58000
Cut Tape (CT)
2,500 : ¥7.46613
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
90A (Tc)
4.5V, 10V
5.3mOhm @ 45A, 10V
2.5V @ 250µA
95 nC @ 10 V
±20V
6000 pF @ 25 V
-
1.2W (Ta), 147W (Tc)
175°C
Automotive
AEC-Q101
Surface Mount
TO-252 (MP-3ZP)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.