Single FETs, MOSFETs

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Infineon Technologies
Series
-SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
1.17A (Ta)7A (Ta)
Rds On (Max) @ Id, Vgs
32mOhm @ 7A, 10V800mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id
2V @ 160µA2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 10 V33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
160 pF @ 25 V1100 pF @ 15 V
Power Dissipation (Max)
1.8W (Ta)2.5W (Ta)
Supplier Device Package
8-SOICPG-SOT223-4
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
11,205
In Stock
1 : ¥5.01000
Cut Tape (CT)
3,000 : ¥1.90231
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
7A (Ta)
4.5V, 10V
32mOhm @ 7A, 10V
2.2V @ 250µA
33 nC @ 10 V
±20V
1100 pF @ 15 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
SOT-223-4
BSP315PH6327XTSA1
MOSFET P-CH 60V 1.17A SOT223-4
Infineon Technologies
28,671
In Stock
1 : ¥6.81000
Cut Tape (CT)
1,000 : ¥2.91733
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.17A (Ta)
4.5V, 10V
800mOhm @ 1.17A, 10V
2V @ 160µA
7.8 nC @ 10 V
±20V
160 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.