Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes Incorporatedonsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
50 V1200 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V20V
Rds On (Max) @ Id, Vgs
56mOhm @ 35A, 20V3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA4.3V @ 10mA
Vgs (Max)
±20V+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V1781 pF @ 800 V
Power Dissipation (Max)
300mW (Ta)348W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
SOT-23-3TO-247-3
Package / Case
TO-236-3, SC-59, SOT-23-3TO-247-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
BSS138-7-F
MOSFET N-CH 50V 200MA SOT23-3
Diodes Incorporated
205,497
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.28094
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-247-3
NTHL040N120SC1
SICFET N-CH 1200V 60A TO247-3
onsemi
283
In Stock
1 : ¥162.47000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
20V
56mOhm @ 35A, 20V
4.3V @ 10mA
106 nC @ 20 V
+25V, -15V
1781 pF @ 800 V
-
348W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.