Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

DN3135N8-G MOSFET N-CH 350V 135MA TO243AA Microchip Technology	19,603 In Stock	1 : ¥6.65000 Cut Tape (CT) 2,000 : ¥5.00798 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	350 V	135mA (Tj)	0V	35Ohm @ 150mA, 0V	-	-	±20V	120 pF @ 25 V	Depletion Mode	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-243AA (SOT-89)	TO-243AA
IPT015N10N5ATMA1 MOSFET N-CH 100V 300A 8HSOF Infineon Technologies	22,373 In Stock	1 : ¥49.92000 Cut Tape (CT) 2,000 : ¥26.53364 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	300A (Tc)	6V, 10V	1.5mOhm @ 150A, 10V	3.8V @ 250µA	211 nC @ 10 V	±20V	16000 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
NVBG075N065SC1 SIC MOS D2PAK-7L 650V onsemi	3,133 In Stock	1 : ¥95.07000 Cut Tape (CT) 800 : ¥65.62538 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	37A (Tc)	15V, 18V	85mOhm @ 15A, 18V	4.3V @ 5mA	59 nC @ 18 V	-	1191 pF @ 325 V	-	139W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.