Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRLML0040TRPBF MOSFET N-CH 40V 3.6A SOT23 Infineon Technologies	34,671 In Stock	1 : ¥3.94000 Cut Tape (CT) 3,000 : ¥1.06406 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	3.6A (Ta)	4.5V, 10V	56mOhm @ 3.6A, 10V	2.5V @ 25µA	3.9 nC @ 4.5 V	±16V	266 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
SQJ431EP-T1_GE3 MOSFET P-CH 200V 12A PPAK SO-8 Vishay Siliconix	11,245 In Stock	1 : ¥15.60000 Cut Tape (CT) 3,000 : ¥7.03577 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	200 V	12A (Tc)	6V, 10V	213mOhm @ 1A, 4V	3.5V @ 250µA	160 nC @ 10 V	±20V	4355 pF @ 25 V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
STD6N90K5 MOSFET N-CH 900V 6A DPAK STMicroelectronics	7,060 In Stock	1 : ¥19.13000 Cut Tape (CT) 2,500 : ¥8.62376 Tape & Reel (TR)	MDmesh™ K5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	900 V	6A (Tc)	10V	1.1Ohm @ 3A, 10V	5V @ 100µA	-	±30V	-	-	110W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.