Single FETs, MOSFETs

Results: 4
Manufacturer
onsemiToshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET®TrenchFET® Gen IIIU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)4A (Ta)10A (Ta), 16A (Tc)41A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
1.15mOhm @ 30A, 10V19mOhm @ 9A, 10V42.7mOhm @ 3A, 4.5V126mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
1V @ 1mA2.2V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.4 nC @ 10 V12.8 nC @ 4.5 V42 nC @ 10 V82 nC @ 10 V
Vgs (Max)
+6V, -8V±20V
Input Capacitance (Ciss) (Max) @ Vds
196 pF @ 50 V840 pF @ 10 V1500 pF @ 15 V5780 pF @ 15 V
Power Dissipation (Max)
1W (Ta)1.25W (Ta), 2.5W (Tc)3.13W (Ta), 96W (Tc)3.2W (Ta), 24W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
5-DFN (5x6) (8-SOFL)PowerPAK® 1212-8SOT-23-3 (TO-236)UF6
Package / Case
6-SMD, Flat Leads8-PowerTDFN, 5 LeadsPowerPAK® 1212-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
3,895
In Stock
1 : ¥3.94000
Cut Tape (CT)
3,000 : ¥0.87864
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
42.7mOhm @ 3A, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
-
1W (Ta)
150°C
Surface Mount
UF6
6-SMD, Flat Leads
PowerPAK 1212-8
SISA35DN-T1-GE3
MOSFET P-CH 30V 10A/16A PPAK
Vishay Siliconix
8,947
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.11081
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
10A (Ta), 16A (Tc)
4.5V, 10V
19mOhm @ 9A, 10V
2.2V @ 250µA
42 nC @ 10 V
±20V
1500 pF @ 15 V
-
3.2W (Ta), 24W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
5-DFN, 8-SO Flat Lead
NTMFS4C302NT1G
MOSFET N-CH 30V 41A/230A 5DFN
onsemi
4,300
In Stock
1 : ¥13.38000
Cut Tape (CT)
1,500 : ¥6.36156
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
41A (Ta), 230A (Tc)
4.5V, 10V
1.15mOhm @ 30A, 10V
2.2V @ 250µA
82 nC @ 10 V
±20V
5780 pF @ 15 V
-
3.13W (Ta), 96W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
SOT-23-3
SI2392ADS-T1-GE3
MOSFET N-CH 100V 3.1A SOT23-3
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥4.27000
Cut Tape (CT)
3,000 : ¥1.43710
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
3.1A (Tc)
4.5V, 10V
126mOhm @ 2A, 10V
3V @ 250µA
10.4 nC @ 10 V
±20V
196 pF @ 50 V
-
1.25W (Ta), 2.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.