Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC220N20NSFDATMA1 MOSFET N-CH 200V 52A TSON-8 Infineon Technologies	10,839 In Stock	1 : ¥38.01000 Cut Tape (CT) 5,000 : ¥17.77012 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	52A (Tc)	10V	22mOhm @ 52A, 10V	4V @ 137µA	43 nC @ 10 V	±20V	3680 pF @ 100 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-3	8-PowerTDFN
IPP220N25NFDAKSA1 MOSFET N-CH 250V 61A TO220-3 Infineon Technologies	903 In Stock	1 : ¥49.34000 Tube	OptiMOS™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	61A (Tc)	10V	22mOhm @ 61A, 10V	4V @ 270µA	86 nC @ 10 V	±20V	7076 pF @ 125 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.