Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
100 V150 V
Current - Continuous Drain (Id) @ 25°C
530mA (Ta)600mA (Ta)
Rds On (Max) @ Id, Vgs
1Ohm @ 600mA, 10V1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.5 nC @ 10 V12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
141 pF @ 50 V510 pF @ 25 V
Power Dissipation (Max)
625mW (Ta)750mW (Ta)
Supplier Device Package
SOT-23-3SOT-23-3 (TO-236)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
ZXMP10A13FTA
MOSFET P-CH 100V 600MA SOT23-3
Diodes Incorporated
79,109
In Stock
597,000
Factory
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.56999
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
600mA (Ta)
6V, 10V
1Ohm @ 600mA, 10V
4V @ 250µA
3.5 nC @ 10 V
±20V
141 pF @ 50 V
-
625mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2325DS-T1-E3
MOSFET P-CH 150V 530MA SOT23-3
Vishay Siliconix
21,928
In Stock
1 : ¥7.96000
Cut Tape (CT)
3,000 : ¥3.28224
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
150 V
530mA (Ta)
6V, 10V
1.2Ohm @ 500mA, 10V
4.5V @ 250µA
12 nC @ 10 V
±20V
510 pF @ 25 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.