Single FETs, MOSFETs

Results: 3
Manufacturer
Diodes IncorporatedFairchild SemiconductorRohm Semiconductor
Series
-PowerTrench®
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
40 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)2.4A (Ta)12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
9mOhm @ 12.5A, 10V80mOhm @ 4.2A, 10V2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA3V @ 250µA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12.2 nC @ 10 V63 nC @ 10 V
Vgs (Max)
±8V±20V+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds
25 pF @ 10 V587 pF @ 20 V2659 pF @ 20 V
Power Dissipation (Max)
150mW (Ta)720mW (Ta)2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)
Supplier Device Package
8-SOICSOT-23-3VMT3
Package / Case
8-SOIC (0.154", 3.90mm Width)SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
VMT3 Pkg
RUM002N05T2L
MOSFET N-CH 50V 200MA VMT3
Rohm Semiconductor
749,840
In Stock
1 : ¥2.30000
Cut Tape (CT)
8,000 : ¥0.39900
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
1.2V, 4.5V
2.2Ohm @ 200mA, 4.5V
1V @ 1mA
-
±8V
25 pF @ 10 V
-
150mW (Ta)
150°C (TJ)
Surface Mount
VMT3
SOT-723
SOT-23-3
DMP4065S-7
MOSFET P-CH 40V 2.4A SOT23
Diodes Incorporated
27,836
In Stock
180,000
Factory
1 : ¥3.53000
Cut Tape (CT)
3,000 : ¥0.77194
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
80mOhm @ 4.2A, 10V
3V @ 250µA
12.2 nC @ 10 V
±20V
587 pF @ 20 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-SOIC
FDS4470
POWER FIELD-EFFECT TRANSISTOR, 1
Fairchild Semiconductor
190,052
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
40 V
12.5A (Ta)
10V
9mOhm @ 12.5A, 10V
5V @ 250µA
63 nC @ 10 V
+30V, -20V
2659 pF @ 20 V
-
2.5W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.