Single FETs, MOSFETs

Results: 2
Manufacturer
Toshiba Semiconductor and StorageVishay Siliconix
Series
TrenchFET®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
20 V30 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V4.5V, 10V
Rds On (Max) @ Id, Vgs
27.6mOhm @ 4A, 10V57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V10.1 nC @ 10 V
Vgs (Max)
±8V±20V
Power Dissipation (Max)
500mW (Ta)710mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C
Supplier Device Package
SOT-23-3 (TO-236)UFM
Package / Case
3-SMD, Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2302CDS-T1-GE3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
47,608
In Stock
1 : ¥4.02000
Cut Tape (CT)
3,000 : ¥1.34537
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
13,499
In Stock
1 : ¥6.08000
Cut Tape (CT)
3,000 : ¥1.42900
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
27.6mOhm @ 4A, 10V
2.5V @ 1mA
10.1 nC @ 10 V
±20V
450 pF @ 15 V
-
500mW (Ta)
150°C
Surface Mount
UFM
3-SMD, Flat Leads
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.