Single FETs, MOSFETs

Results: 2
Manufacturer
Micro Commercial CoVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
28A60A (Tc)
Rds On (Max) @ Id, Vgs
8.7mOhm @ 20A, 10V40mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.3 nC @ 10 V60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 30 V1975 pF @ 50 V
Power Dissipation (Max)
5.4W (Ta), 83W (Tc)60W
Supplier Device Package
DFN5060PowerPAK® SO-8
Package / Case
8-PowerTDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SIR882ADP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8
Vishay Siliconix
8,897
In Stock
1 : ¥19.79000
Cut Tape (CT)
3,000 : ¥8.93287
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
60A (Tc)
4.5V, 10V
8.7mOhm @ 20A, 10V
2.8V @ 250µA
60 nC @ 10 V
±20V
1975 pF @ 50 V
-
5.4W (Ta), 83W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
DFN5060
MCAC28P06Y-TP
P-CHANNEL MOSFET, DFN5060
Micro Commercial Co
5,403
In Stock
1 : ¥7.47000
Cut Tape (CT)
5,000 : ¥2.68658
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
28A
-
40mOhm @ 20A, 10V
2.7V @ 250µA
19.3 nC @ 10 V
±20V
1050 pF @ 30 V
-
60W
-55°C ~ 150°C (TJ)
Surface Mount
DFN5060
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.