Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V100 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V10V
Rds On (Max) @ Id, Vgs
175mOhm @ 6.6A, 10V185mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V20 nC @ 5 V
Vgs (Max)
±16V±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V440 pF @ 25 V
Power Dissipation (Max)
38W (Tc)48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IRFR9024NTRPBF
MOSFET P-CH 55V 11A DPAK
Infineon Technologies
21,226
In Stock
1 : ¥7.72000
Cut Tape (CT)
2,000 : ¥3.17630
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
55 V
11A (Tc)
10V
175mOhm @ 6.6A, 10V
4V @ 250µA
19 nC @ 10 V
±20V
350 pF @ 25 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO252-3
IRLR120NTRPBF
MOSFET N-CH 100V 10A DPAK
Infineon Technologies
12,564
In Stock
1 : ¥8.21000
Cut Tape (CT)
2,000 : ¥3.38634
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
10A (Tc)
4V, 10V
185mOhm @ 6A, 10V
2V @ 250µA
20 nC @ 5 V
±16V
440 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.