Single FETs, MOSFETs

Results: 5
Manufacturer
Diodes IncorporatedInfineon TechnologiesNexperia USA Inc.
Series
-HEXFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V55 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)5.1A (Ta)7A (Ta), 18.2A (Tc)7.7A (Ta)15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
25mOhm @ 5A, 10V28mOhm @ 5A, 10V52mOhm @ 4.2A, 4.5V57.5mOhm @ 3.1A, 10V102mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
900mV @ 250µA3V @ 250µA4V @ 1mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10.2 nC @ 4.5 V12.2 nC @ 10 V14 nC @ 10 V53.1 nC @ 10 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 25 V779 pF @ 25 V808 pF @ 15 V2569 pF @ 30 V
Power Dissipation (Max)
1W (Ta)1.4W (Ta)2W (Ta)60W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 155°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
LFPAK56, Power-SO8POWERDI3333-8SOT-223SOT-223-3SOT-23-3
Package / Case
8-PowerVDFNSC-100, SOT-669TO-236-3, SC-59, SOT-23-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23
Diodes Incorporated
162,029
In Stock
2,232,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52630
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
1.8V, 4.5V
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
-
1.4W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-223-3
DMP6023LE-13
MOSFET P-CH 60V 7A/18.2A SOT223
Diodes Incorporated
43,374
In Stock
250,000
Factory
1 : ¥6.32000
Cut Tape (CT)
2,500 : ¥2.40764
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7A (Ta), 18.2A (Tc)
4.5V, 10V
28mOhm @ 5A, 10V
3V @ 250µA
53.1 nC @ 10 V
±20V
2569 pF @ 30 V
-
2W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223-3
TO-261-4, TO-261AA
SOT223-3L
IRFL024ZTRPBF
MOSFET N-CH 55V 5.1A SOT223
Infineon Technologies
96,583
In Stock
1 : ¥4.02000
Cut Tape (CT)
2,500 : ¥1.88622
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
55 V
5.1A (Ta)
10V
57.5mOhm @ 3.1A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
340 pF @ 25 V
-
1W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-223
TO-261-4, TO-261AA
PowerDI3333-8
DMP6023LFGQ-7
MOSFET P-CH 60V 7.7A PWRDI3333-8
Diodes Incorporated
4,854
In Stock
450,000
Factory
1 : ¥5.91000
Cut Tape (CT)
2,000 : ¥2.25745
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
7.7A (Ta)
4.5V, 10V
25mOhm @ 5A, 10V
3V @ 250µA
53.1 nC @ 10 V
±20V
2569 pF @ 30 V
-
1W (Ta)
-55°C ~ 155°C (TJ)
Automotive
AEC-Q101
Surface Mount
POWERDI3333-8
8-PowerVDFN
LFPAK56/POWER-SO8/SOT669
BUK7Y102-100B,115
MOSFET N-CH 100V 15A LFPAK56
Nexperia USA Inc.
2,473
In Stock
1 : ¥6.40000
Cut Tape (CT)
1,500 : ¥2.71750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
15A (Tc)
10V
102mOhm @ 5A, 10V
4V @ 1mA
12.2 nC @ 10 V
±20V
779 pF @ 25 V
-
60W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.