Single FETs, MOSFETs

Results: 2
Manufacturer
Littelfuse Inc.onsemi
Series
PolarUniFET™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Drain to Source Voltage (Vdss)
250 V300 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)82A (Tc)
Rds On (Max) @ Id, Vgs
35mOhm @ 41A, 10V129mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V142 nC @ 10 V
Vgs (Max)
±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
2250 pF @ 25 V4800 pF @ 25 V
Power Dissipation (Max)
250W (Tc)500W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-263 (D2PAK)TO-3P
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263ABTO-3P-3, SC-65-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-263
FDB28N30TM
MOSFET N-CH 300V 28A D2PAK
onsemi
1,491
In Stock
1 : ¥17.24000
Cut Tape (CT)
800 : ¥9.66058
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
300 V
28A (Tc)
10V
129mOhm @ 14A, 10V
5V @ 250µA
50 nC @ 10 V
±30V
2250 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-3P
IXTQ82N25P
MOSFET N-CH 250V 82A TO3P
Littelfuse Inc.
0
In Stock
Check Lead Time
1 : ¥74.38000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
250 V
82A (Tc)
10V
35mOhm @ 41A, 10V
5V @ 250µA
142 nC @ 10 V
±20V
4800 pF @ 25 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.