Single FETs, MOSFETs

Results: 12
Manufacturer
ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedInfineon TechnologiesNexperia USA Inc.onsemiToshiba Semiconductor and Storage
Series
-HEXFET®OptiMOS™TrenchMOS™U-MOSIX-HU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
115mA (Ta)190mA (Ta)190mA (Ta), 300mA (Tc)200mA (Ta)220mA (Ta)230mA (Ta)300mA (Tc)3.7A (Ta)4.6A (Tc)15A (Ta)40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V2.5V, 4.5V4.5V, 10V5V, 10V6V, 10V10V
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 10V44mOhm @ 2A, 4.5V50mOhm @ 7.5A, 10V65mOhm @ 3.7A, 4.5V3Ohm @ 500mA, 10V3.5Ohm @ 220mA, 10V3.5Ohm @ 230mA, 10V4.5Ohm @ 100mA, 10V5Ohm @ 500mA, 10V6Ohm @ 190mA, 10V7.5Ohm @ 500mA, 10V7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
950mV @ 250µA1.2V @ 250µA1.4V @ 26µA1.5V @ 250µA1.6V @ 250µA1.8V @ 13µA2.1V @ 250µA2.5V @ 250µA2.5V @ 300µA3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
0.43 nC @ 4.5 V0.9 nC @ 10 V1 nC @ 10 V8.2 nC @ 8 V12 nC @ 5 V24 nC @ 10 V36 nC @ 10 V
Vgs (Max)
±8V+10V, -20V±12V±20V±30V
Input Capacitance (Ciss) (Max) @ Vds
20 pF @ 10 V20.9 pF @ 25 V27 pF @ 25 V32 pF @ 25 V50 pF @ 10 V50 pF @ 25 V118 pF @ 10 V633 pF @ 10 V1770 pF @ 10 V1855 pF @ 50 V
Power Dissipation (Max)
200mW (Ta)265mW (Ta), 1.33W (Tc)300mW (Ta)350mW (Ta)360mW (Ta)370mW (Ta)500mW (Ta)630mW (Ta), 104W (Tc)830mW830mW (Ta)1.3W (Ta)41W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)175°C
Supplier Device Package
8-TSON Advance (3.1x3.1)DPAK+Micro3™/SOT-23PG-SOT-23-3PG-SOT23SOT-23SOT-23-3TO-236AB
Package / Case
8-PowerVDFNTO-236-3, SC-59, SOT-23-3TO-252-3, DPAK (2 Leads + Tab), SC-63
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
2N7002NXAKR
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
76,312
In Stock
1 : ¥1.23000
Cut Tape (CT)
3,000 : ¥0.20992
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
190mA (Ta), 300mA (Tc)
5V, 10V
4.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.43 nC @ 4.5 V
±20V
20 pF @ 10 V
-
265mW (Ta), 1.33W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N7002-7-F
MOSFET N-CH 60V 115MA SOT23-3
Diodes Incorporated
377,621
In Stock
1 : ¥1.56000
Cut Tape (CT)
3,000 : ¥0.26991
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 50mA, 5V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
370mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS138-7-F
MOSFET N-CH 50V 200MA SOT23-3
Diodes Incorporated
206,233
In Stock
1 : ¥1.64000
Cut Tape (CT)
3,000 : ¥0.28094
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
1.5V @ 250µA
-
±20V
50 pF @ 10 V
-
300mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
TO-236AB
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
Nexperia USA Inc.
586,701
In Stock
1 : ¥2.22000
Cut Tape (CT)
3,000 : ¥0.37855
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±30V
50 pF @ 10 V
-
830mW (Ta)
-65°C ~ 150°C (TJ)
-
-
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS123NH6327XTSA1
MOSFET N-CH 100V 190MA SOT23-3
Infineon Technologies
172,469
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.54713
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
190mA (Ta)
4.5V, 10V
6Ohm @ 190mA, 10V
1.8V @ 13µA
0.9 nC @ 10 V
±20V
20.9 pF @ 25 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT23
TO-236-3, SC-59, SOT-23-3
SOT-23-3
2N7002
MOSFET SOT23 N 60V 5OHM 150C
onsemi
80,855
In Stock
30,000
Factory
1 : ¥3.69000
Cut Tape (CT)
3,000 : ¥0.98624
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 25 V
-
200mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
Infineon Technologies
152,445
In Stock
1 : ¥4.60000
Cut Tape (CT)
3,000 : ¥1.03881
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
2.5V, 4.5V
65mOhm @ 3.7A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
633 pF @ 10 V
-
1.3W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
BSS127IXTSA1
BSS138IXTSA1
SMALL SIGNAL MOSFETS PG-SOT23-3
Infineon Technologies
81,759
In Stock
1 : ¥3.04000
Cut Tape (CT)
3,000 : ¥0.51495
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
230mA (Ta)
4.5V, 10V
3.5Ohm @ 230mA, 10V
1.4V @ 26µA
1 nC @ 10 V
±20V
32 pF @ 25 V
-
360mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP2070UQ-7
MOSFET BVDSS: 8V~24V SOT23 T&R 3
Diodes Incorporated
3,066
In Stock
1 : ¥3.86000
Cut Tape (CT)
3,000 : ¥0.84681
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
4.6A (Tc)
1.8V, 4.5V
44mOhm @ 2A, 4.5V
950mV @ 250µA
8.2 nC @ 8 V
±8V
118 pF @ 10 V
-
830mW
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-PowerVDFN PKG
TPN1200APL,L1Q
PB-F POWER MOSFET TRANSISTOR TSO
Toshiba Semiconductor and Storage
4,386
In Stock
1 : ¥9.93000
Cut Tape (CT)
5,000 : ¥2.38283
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
11.5mOhm @ 20A, 10V
2.5V @ 300µA
24 nC @ 10 V
±20V
1855 pF @ 50 V
-
630mW (Ta), 104W (Tc)
175°C
-
-
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
10,421
In Stock
1 : ¥11.74000
Cut Tape (CT)
2,000 : ¥3.22559
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
15A (Ta)
6V, 10V
50mOhm @ 7.5A, 10V
3V @ 1mA
36 nC @ 10 V
+10V, -20V
1770 pF @ 10 V
-
41W (Tc)
175°C
-
-
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE MOSFE
ANBON SEMICONDUCTOR (INT'L) LIMITED
202,907
In Stock
1 : ¥1.31000
Cut Tape (CT)
3,000 : ¥0.22873
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
220mA (Ta)
4.5V, 10V
3Ohm @ 500mA, 10V
1.6V @ 250µA
-
±20V
27 pF @ 25 V
-
350mW (Ta)
150°C (TJ)
-
-
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
Showing
of 12

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.